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BUK221-50DY
Dual channel high-side TOPFETTM
Rev. 01 -- 16 April 2003 Product data
1. Product profile
1.1 Description
Monolithic temperature and overload protected dual high-side power switch based on TOPFETTM Trench technology in a 7-pin surface mount plastic package. Product availability: BUK221-50DY in SOT427 (D2-PAK).
1.2 Features
s s s s s s s s Very low quiescent current Power TrenchMOSTM Overtemperature protection Over and undervoltage protection Reverse battery protection Low charge pump noise Loss of ground protection Negative load clamping s s s s s s s s CMOS logic compatibility Current limitation Latched overload protection ESD protection for all pins Diagnostic status indication Off-state open load detection Load dump protection Internal ground resistor.
1.3 Applications
s 12 and 24 V grounded loads s Inductive loads s High inrush current loads s Replacement for relays and fuses.
1.4 Quick reference data
Table 1: Symbol RBLon IL IL(nom) IL(lim) VBG(oper) Quick reference data Parameter battery-load on-state resistance load current nominal load current (ISO) self-limiting load current battery-ground operating voltage Min 3.6 8 5.5 Max 90 4 16 35 Units m A A A V
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
2. Pinning information
B
S
mb I1 P I2 1234567 L2 L1
Front view
MBK128
G
03pa68
No connection can be made to pin 4 (cropped).
P represents protection circuitry.
Fig 1. Pinning; SOT427 (D2-PAK).
Fig 2. Symbol; (Dual High-Side Switch) TOPFETTM.
2.1 Pin description
Table 2: Symbol L1 G I1 B S I2 L2 [1] [2]
Pin description Pin 1 2 3 4 5 6 7 mb I/O O I O I O [2] [1] [2]
Description load 1 circuit common ground input 1 battery status input 2 load 2 mounting base
Pin 4 is cropped and cannot be connected to the PCB by surface mounting. The battery is connected to the mounting base.
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
2 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
3. Block diagram
BUK221-50DY
4/mb B
CHANNEL1 VOLTAGE REGULATOR CHARGE PUMP
POWER MOSFET1
CURRENT LIMIT 1
3 I1
CONTROL LOGIC1
OPEN CIRCUIT SENSOR OVERVOLTAGE PROTECTION UNDERVOLTAGE PROTECTION SHORT CIRCUIT PROTECTION TEMPERATURE SENSOR
L1
STATUS DIAGNOSIS
5
S
CHANNEL2 VOLTAGE REGULATOR CHARGE PUMP
POWER MOSFET2
CURRENT LIMIT 7
I2
6
CONTROL LOGIC2
OPEN CIRCUIT SENSOR OVERVOLTAGE PROTECTION UNDERVOLTAGE PROTECTION SHORT CIRCUIT PROTECTION TEMPERATURE SENSOR RLG1 RLG2
L2
RG G 2
03pa69
Fig 3. Elements of the dual high-side TOPFET switch.
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
3 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
4. Functional description
A diagnostic status ensures faster fault detection. Active current limit is combined with latched short circuit protection in order to protect the device in the event of a short circuit. Thermal shutdown for high temperature conditions has an automatic restart at a lower temperature so providing protection against excessive power dissipation. Active clamping protects the device against low energy spikes. Undervoltage lockout means the device shuts down for low battery voltages, thus avoiding faulty operation. Overvoltage shutdown in the on-state protects a load such as a lamp filament from potentially destructive voltage spikes.
Table 3: Truth table Abbreviations: L = logic LOW; H = logic HIGH; X = don't care; 0 = condition not present; 1 = condition present; UV = undervoltage; OV = overvoltage; OC = open circuit load; SC = short circuit; OT = overtemperature [1]. Input 1 L L 2 L L Supply UV 0 0 OV X X OC 0 1 Load 1 SC X X OT X X OC 0 X Load 2 SC X X OT X X Load output 1 OFF OFF 2 OFF OFF H L both off & normal both off, one/both OC or shorted to VS or battery; Figure 10 one off & OC, with other on & normal one on & normal, with other off & normal both on & normal supply undervoltage lockout supply overvoltage shutdown one SC tripped one SC tripped, with other off & normal one SC tripped, with other on & normal one OT shutdown one OT shutdown, with other off & normal one OT shutdown, with other on & normal Status Operating mode
L H H H H H H H H H H
H L H X X X L H X L H
0 0 0 1 0 0 0 0 0 0 0
X 0 0 0 1 0 0 0 0 0 0
1 0 0 X X 0 0 0 0 0 0
X 0 0 X 0 1 1 1 0 0 0
X 0 0 X 0 X X X 1 1 1
0 0 0 0 X X 0 0 X 0 0
0 0 0 X 0 X 0 0 X 0 0
0 0 0 X 0 X X 0 X X 0
OFF ON ON OFF OFF OFF OFF OFF OFF OFF OFF
ON OFF ON OFF OFF X OFF ON X OFF ON
L H H H H L L L L L L
[1]
The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold temperature. See "Overtemperature protection" characteristics in Table 6 "Static characteristics".
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
4 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
5. Limiting values
Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VBG IL Ptot Tstg Tj Tmb VBGR VBGRR Parameter battery-ground supply voltage load current total power dissipation storage temperature junction temperature mounting base temperature reverse battery-ground supply voltage repetitive reverse battery-ground supply voltage input current repetitive peak input current status current repetitive peak status current non-repetitive battery-load clamping energy electrostatic discharge voltage 0.1; tp = 300 s Tj = 150 C prior to turn-off; VBG = 13 V; IL = 5 A; (one channel) Figure 13 Human Body Model 1; C = 100 pF; R = 1.5 k 0.1; tp = 300 s during soldering ( 10 s) RI 3.3 k; RSS 3.3 k; Figure 10
[2]
Conditions
[1]
Min -55 -40 -
Max 45 4 44.6 +175 +150 260 16 32
Unit V A W C C C V V
Tmb 130 C Tmb 25 C
Reverse battery voltage
Input current II IIRM IS ISRM EBL(CL)S -5 -50 -5 -50 +5 +50 +5 +50 60 mA mA mA mA mJ
Status current
Inductive load clamping
Electrostatic discharge voltage Vesd 2 kV
[1] [2]
The device will not be harmed by exposure to the maximum supply voltage, but normal operation is not possible because of overvoltage shutdown - see Table 6 "Static characteristics" for the operating range. Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. See Figure 10 "Typical dynamic response circuit diagram including reverse supply protection and open load detection."
6. Thermal characteristics
Table 5: Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions per channel both channels mounted on printed circuit board; minimum footprint Min Typ 4 2 50 Max 5.6 2.8 Unit K/W K/W K/W
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
5 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
7. Static characteristics
Table 6: Static characteristics Limits are valid for -40 C Tmb +150 C and typical values for Tmb = 25 C unless otherwise specified. Symbol VBG(CL) VBL(CL) VLG(CL) Parameter battery-ground clamping voltage battery-load clamping voltage load-ground clamping voltage Conditions IG = 1 mA IL = IG = 1 mA IL = 10 mA; Figure 13 IL = 4 A; tp = 300 s Supply voltage VBG(oper) Current [2] IB battery quiescent current VLG = VIG = 0 V; Figure 9 Tmb = 150 C Tmb = 25 C IL(off) off-state load current VBL = VBG; per channel Tmb = 150 C Tmb = 25 C IG(on) IL(nom) Resistance RBLon battery-load on-state resistance 9 VBG 35 V; IL = 4 A; Figure 4 Tmb = 25 C Tmb = 150 C VBG = 5.5 V; IL = 4 A Tmb = 25 C Tmb = 150 C RG Input II VIG(CL) VIG(on) VIG(off) VIG(on)(hys) II(on) II(off) VLG(oc) IG(oc)
[7] [5] [3] [1]
Min 45 50 -18 -20 5.5
Typ 55 55 -23 -25 -
Max 65 65 -28 -30 35
Unit V V V V V
Clamping voltage
battery-ground operating voltage
[4]
0.1 0.1 2 4 -
20 1 10 1 3 6 -
A A A A mA mA A
operating current nominal load current (ISO)
one channel on; Figure 5 both channels on VBL = 0.5 V; Tmb = 85 C
3.6
[6]
73 146 76 150 75 60 7 2.1 1.8 0.3 2.5 0.8
90 180 120 240 100 160 8.5 3 0.5 100 3.5 1.5
m m m m A V V V V A A V mA
ground resistor input current input-ground clamping voltage input-ground turn-on voltage input-ground turn-off voltage input-ground turn-on hysteresis input turn-on current input turn-off current
[8][9]
IG = -200 mA; tp = 300 s VIG = 5 V II = 200 A Figure 8
40 20 5.5 1.2 0.15
VIG = 3 V VIG = 1.2 V VBG 9 V VBG = VLG = 16 V open load detected; other channel is off
12 1.5 -
Open current detection
load-ground open circuit voltage open-circuit operating current
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
6 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
Table 6: Static characteristics...continued Limits are valid for -40 C Tmb +150 C and typical values for Tmb = 25 C unless otherwise specified. Symbol IL(oc) RL(oc) Parameter load open circuit current open circuit load resistor Conditions VLG = 3.5 V; per channel VLG = 16 V; per channel VS = 5 V; connected externally; per channel; Figure 10
[11]
Min -
Typ -22 -200 10
Max -40 -300 -
Unit A A k
Undervoltage [9] VBG(uv) battery-ground undervoltage 2 4.2 0.5 5.3 1.5 V V VBG(uv)(hys) battery-ground undervoltage hysteresis Overvoltage [9] VBG(ov) IG(ov) IL(lim) Tj(th) Tj(th)(hys) Status [9] VSG(CL) VSG(L) IS(off) status-ground clamping voltage status-ground low voltage status leakage current IS = 100 A IS = 100 A; Figure 6 IS = 250 A VSG = 5 V Tmb = 150 C Tmb = 25 C RS status resistor VSG = 5 V; connected externally; Figure 10
[14]
battery-ground overvoltage overvoltage operating current self-limiting load current
[9][10]
[12]
35 0.2 8
40 1 1 12 170 10
45 2 2.5 16 190 20
V V mA A C C
VBG(ov)(hys) battery-ground overvoltage hysteresis VBG = 45 V; per channel VBG 8 V; VBL = VBG; Figure 7
[13]
Overload protection Overtemperature protection
threshold junction temperature threshold junction temperature hysteresis
150 3
5.5 -
7 0.7 0.1 47
8.5 0.9 1.1 10 1 -
V V V A A k
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14]
For a high-side switch, the load pin voltage goes negative with respect to the ground during the turn-off of an inductive load. This negative voltage is clamped by the device. 9 V VBG 35 V This is the current drawn from the supply when both inputs are LOW, and includes leakage current to the loads. Defined as in ISO10483-1. For comparison purposes only. This only applies to the RBLon per channel. The supply and input voltages for the RBLon tests are continuous. The specified pulse duration is tp = 300 s, and refers only to the applied load current. RG is a resistor incorporated internally into the package. 5.5 V VBG 35 V An open circuit load can be detected in the off-state and requires an external pull-up resistor, RL(oc). See Table 3 "Truth table" Overtemperature protection is not active during reverse current operation. Undervoltage sensor causes each output channel to switch off and reset. Overvoltage sensor causes each output channel to switch off to protect the load. After cooling below the reset temperature the channel will resume normal operation. The status output is an open drain transistor and requires an external pull-up resistor, RS, to indicate a logic HIGH.
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
7 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
200 RBLon (m) 160 Tj = 150C
03pa96
120
80
Tj = 25C Tj = -40C
40
0 0 10 20 30 VBG (V) 40
IL = 4 A; VIG = 5 V
Fig 4. Battery-load on-state resistance as a function of battery-ground voltage; typical values.
4 IG (mA) 3 undervoltage shutdown Tj = -40C Tj = 25C 2 Tj = 150C overvoltage shutdown clamping
03pa95
1
0 0 25 50 VBG (V) 75
VIG = 5 V
Fig 5. Supply current characteristics: operating current as a function of battery-ground voltage for one channel only; typical values.
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
8 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
5 IS (mA) 4
03pa94
16 IL(lim) (A) 12
03pa93
3 8 2
4 1
0 0 1 2 VSG (V) 3
0 0 4 8 12 VBL (V) 16
VBG = 13 V; VIG = 5 V; Tj = 25 C
VBG = 16 V; VIG = 5 V; Tmb = 25 C
Fig 6. Status current as a function of status-ground voltage; typical values.
Fig 7. Self-limiting load current as a function of battery-load voltage; typical values.
3.5 VIG(th) (V) 3
03pa98
6 IB ( A)
03pa97
max 4
2.5
2
VIG(ON) VIG(OFF)
2
1.5 min 1 -50 0 50 100 150 200 Tj (C) 0 -50 0 50 100 150 200 Tj (C)
5.5 V VBG 35 V
VBG = 35 V
Fig 8. Input-ground threshold voltage as a function of junction temperature.
Fig 9. Battery quiescent current as a function of junction temperature; typical values.
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
9 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
8. Dynamic characteristics
Table 7: Switching characteristics Tmb = 25 C; VBG = 13 V; resistive load RL = 13 per channel; Figure 12. Symbol td(on) dV/dton ton td(off) dV/dtoff toff Parameter turn-on delay time rising slew rate turn-on switching time turn-off delay time falling slew rate turn-off switching time Conditions to 10 % VL 30 to 70 % VL to 90 % VL to 90 % VL 70 to 30 % VL to 10 % VL Min 0.5 0.5 Typ 30 1 60 20 1 40 Max 2 220 2 200 Unit s V/s s s V/s s Turn-on measured from the input going HIGH
Turn-off measured from the input going LOW
Table 8: Capacitances Tmb = 25 C; f = 1 MHz; VIG = 0 V. Symbol Csg Cig Cbl Parameter status-ground capacitance input-ground capacitance battery-load capacitance Conditions VSG = 5 V VBG = 13 V VBL = 13 V Min Typ 11 15 130 Max 15 20 180 Unit pF pF pF
Per channel
Table 9: Short circuit load protection characteristics Tmb 125 C prior to the overload short circuit condition. Symbol PBL(OV)(th) tBL(d)(sc) Parameter battery-load overload power threshold Conditions
[1] [2]
Min 10 200
Typ 55 350
Max 100 800
Unit W s
5.5 VBG 35 V; device trips if PBL > PBL(OV)(th); Figure 11 battery-load short-circuit characteristic time
[1] [2]
Short circuit protection is latched, but at high temperatures where Tj > Tj(th) overtemperature protection may occur first. Normal operation may only be resumed following a short circuit after the input is toggled LOW then HIGH again. Short circuit response time td(sc) varies with battery-load power PBL according to the logarithmic model equation:
t BL(d)(sc) t d(sc) -----------------------------------P BL ------------------------- ln P BL(OV)(th)
Table 10: Status response times Limits are valid for -40 C Tmb +150 C and typical values for Tmb = 25 C unless otherwise specified. Symbol td(oc) Parameter open-circuit response time Conditions Figure 10 and 14 Min Typ 65 Max 100 Unit s Measured from when the input goes LOW to when the status goes LOW
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
10 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
IB IS
RS RSS VSG RL(oc)
VBG II VIG
RI P
IL
VS
VL
RL
IG
03pa90
RI 3.3 k; RS = 47 k; RSS 3.3 k and RL(oc) = 10 k.
Fig 10. Typical dynamic response circuit diagram including reverse supply protection and open load detection.
td(sc) VL IL
ton
toff
90%
dV/dton dV/dtoff
10%
0A
5V VSG VSG
0V
5V
0.7 V 0V
5V VIG VIG
0V
5V
0
03pb03
0
03pa51
VBG = 13 V; VIG = 5 V and Tj = 25 C
Fig 11. Short circuit protection waveforms.
Fig 12. Resistive switching waveforms and definitions.
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
11 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
VL
0V
ton EBL(CL)S IL VL
toff
90%
0A
5V VSG VSG
0V
5V
10%
td(oc)
0V
5V VIG VIG
0.7 V 0V
5V
0
03pa99
0
03pb00
Fig 13. Switching a large inductive load.
Fig 14. Open circuit detect waveforms.
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
12 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
9. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK); 7 leads (one lead cropped)
SOT427
A E A1
D1 mounting base
D
HD
4
Lp
1
7
b e e e e e e
c Q
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.27 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT427
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-06-25 01-04-18
Epoxy meets UL94 V0 at 1/8''. Net mass: 1.5g. For soldering guidelines and surface mount footprint design, please refer to Data Handbook SC18.
Fig 15. SOT427 (D2-PAK).
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
13 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
10. Revision history
Table 11: Rev Date 01 20030416 Revision history CPCN Description Product data (9397 750 11167)
9397 750 11167
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
14 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
11. Data sheet status
Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
14. Trademarks
TOPFET -- is a trademark of Koninklijke Philips Electronics N.V. TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 11167
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 16 April 2003
15 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFETTM
Contents
1 1.1 1.2 1.3 1.4 2 2.1 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
(c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 April 2003 Document order number: 9397 750 11167

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